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| 2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5239 900 550 7 3(Pulse6) 1.5 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) 2SC5239 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ V MHz pF 2.5 BCE 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=-0.25A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 Unit A A V 16.00.7 8.80.2 a b o3.750.2 V 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.45 ton (s) 0.7max tstg (s) 4.0max tf (s) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 3 40 0m A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 1.5 I C/ IB=5 Const. IC - V BE Temperature Characteristics (Typical) (V CE= 4V) 5 300mA 200 mA 4 Collector Current I C( A) 0.5 1 5 Collector Current I C (A) 150 mA 2 100m A 1.0 VBE(sat) 3 2 1 IB=40m A 0.5 1 V C E( sat) 0 0.03 0.05 0.1 0 0 0.5 Base-Emittor Voltage V B E( V) 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Collector Current I C (A) (VCE=4V) 40 D C Cur r ent Gai n h F E j - a( C /W) hFE - IC Characteristics (Typical) ton*t st g*t f ( s) 125C 25C 7 5 t on *t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 4 t s tg V C C 250V IC:I B1: I B 2= 1:0.15:-0.45 1 0.5 ton 0.1 0.2 tf -55C Transient Thermal Resistance Switching T im e 1 10 0.5 0.3 5 4 0.02 0.05 0.1 0.5 1 56 0.5 1 3 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 7 5 50 Reverse Bias Safe Operating Area 7 5 M aximum Po wer Dissipat io n P C( W) 50 P c - T a Derating 10 s 0 s 40 W ith Collecto r Cur rent I C( A) Co lle ctor Cu rren t I C( A) 1 0.5 1 0.5 In fin 30 ite he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 20 10 Without Heatsink 0 25 50 75 100 125 150 0.01 10 50 100 500 0.01 10 50 100 500 1000 2 0 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 130 |
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